[Publication/Press]Demonstration of Ultra-High-Speed, Non-Volatile Switching Devices
- May 15
- 1 min read
Updated: May 27
Our latest publication in Science, led by Project Assistant Professor, Dr. Tsai Hanshen, and former Project Assistant Professor, Dr. Takuya Matsuda (currently Assistant Professor at the University of Osaka), demonstrates ultrafast and ultra-low-power electrical switching in devices based on the chiral antiferromagnet Mn3Sn.
By combining Mn3Sn with tantalum bilayers, our team achieved bidirectional nonvolatile switching on picosecond timescales, 1,000 times faster than those of conventional CPUs and GPUs. At the same time, the antiferromagnet-based device features drastically reduced power consumption compared with conventional ferromagnetic and heavy-metal-based devices. In addition, taking advantage of the low energy consumption, we also demonstrate the picosecond switching occurred by photocurrent from O/E conversion at telecommunication wavelengths. Our findings highlight the strong potential of functional antiferromagnets for next-generation memory and information-processing technologies requiring ultrafast operation and high energy efficiency, and may contribute to the development of integrated photonic-spintronic devices.
H. Tsai, T. Matsuda, K. Kondou, K. Shimizu, T. Nomoto, T. Higo, T. Matsuo, Y. Tsushima, M. Asakura, H. Peng, D. NishioHamane, S. Yamada, R. Tang, T. Iizuka, S. Miwa, R. Arita, M. Takenaka, S. Nakatsuji
Picosecond ultralow-power switching device based on an antiferromagnet
We have issued a press release regarding the results of this research. Please click the link below for more details.
Excerpt from the press release. (Left Figure) A light pulse is used to generate a picosecond current pulse, which is then applied to Mn₃Sn. (Right Figure) The direction of the magnetic octupole (orange arrow) in Mn₃Sn changes in response to the current pulse.